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SI 500 C DRIE

Cryogenic ICP DRIE plasma etch system with gas chopping (Bosch) capability With vacuum load lock Automatic switching unit for comfortable change between cryogenic etch and gas chopping (Bosch) process Substrate temperature from -150 °C to 80 °C (LN2 cooling) Substrate temperature range from -10 °C to +150 °C for gas chopping (Bosch) process with circulation chiller

SI 500 C RT

Cryogenic ICP plasma etch system with automatic switching unit for comfortable change between cryogenic etch and room temperature processing With vacuum load lock Substrate temperature from -150 °C to 80 °C (LN2 cooling) Substrate temperature -10 °C to 150 °C for room temperature processing with circulation chiller

SI 500 ALE

SI 500 ALE

ICP-RIE with atomic layer etch system Precise ion energy control with low ion energy of PTSA combined with high-precision bias control Efficient gas control and switching Process monitoring with SENTECH Real Time Monitor optional

SI 500 CCP

SENTECH SI 500 CCP

RIE plasma etch system Smart solution for He backside-cooled etching Capacitively coupled plasma source, upgradable to ICP plasma source PTSA 200

SI 500 DRIE

Deep reactive ion etch system for gas chopping process Fast gas replacement for low scalloping and smoother sidewalls Efficient ICP source coupling for fast etch rate For up to 150 mm wafers

SI 500 400

ICP plasma etch system for multi-wafers and large substrates With vacuum load lock For up to 380 mm wafers

SI 500 C

Cryogenic ICP plasma etch system With vacuum load lock Substrate temperature from -150 °C to 80 °C (LN2 cooling) Substrate temperature -10 °C to 150 °C for Bosch process with circulation chiller (optional) Automatic switching unit for comfortable change between cryogenic etch and Bosch process

SI 500

SENTECH SI 500 ICP-RIE Plasma Etch System

ICP-RIE plasma etch system With compact vacuum load lock For up to 200 mm wafers Substrate temperature from -20 °C to 250 °C Optional: -30 °C to 200 °C

SI 500 ALE

SI 500 ALE

An extension of the SI 500, the SI 500 ALE provides stable plasma at low operating pressure and low ICP power for low-damage etching with precise RF control.