- Cryogenic ICP DRIE plasma etch system with gas chopping (Bosch) capability
- With vacuum load lock
- Automatic switching unit for comfortable change between cryogenic etch and gas chopping (Bosch) process
- Substrate temperature from -150 °C to 80 °C (LN2 cooling)
- Substrate temperature range from -10 °C to +150 °C for gas chopping (Bosch) process with circulation chiller
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Plasma Process Technology
Plasma Process Technology
Low-damage plasma etch and deposition systems from SENTECH
Thin Film Metrology
Thin Film Metrology
SENTECH thin film metrology tools for repeatable and accurate results
- Application and Industries
Application and Industries
Leading-edge application capabilities from SENTECH
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Customer Support
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