Multiple cassette stations
2 cassette/carrier stations with flexible carrier size Automatic cassette/carrier detection: presents and size
Etchlab 380
RIE plasma etcher Open lid For up to 300 mm wafers Diagnostic windows for laser interferometer and OES
SECS/GEM
Basic SECS/GEM integration with communication to MES Advanced SECS/GEM integration, including process program management and remote control by MES
SI 500 D
ICPECVD plasma deposition system With vacuum load lock Up to 200 mm wafers Substrate temperature from RT to 350 °C Laser endpoint detection Optional substrate bias
Depolab 200
Plasma-enhanced chemical vapour deposition (PECVD) tool Open lid loading For up to 200 mm wafers Substrate temperature up to 400 °C Optional low-frequency mixing for low-stress films Dry pumping unit Small footprint
SIPAR
PECVD and ALD combined in one reaction reactor With vacuum load lock For up to 200 mm wafers PTSA ICP plasma source for ICPECVD and PEALD Direct backing pump operation for ALD Turbo molecular pump operation for PECVD Switchablebypass system for optimal process parameters Substrate bias power (optional)
SI PEALD
Load lock True remote plasma source Low-temperature processing using true remote plasma-enhanced ALD Lifting device for opening reactor Compatible with cluster integration
SI ALD
Load lock Thermal ALD processing Upgradable with the True Remote CCP plasma source Compatible with cluster integration
SI 591 compact
RIE plasma etching with small footprint Load lock Corrosive and non-corrosive chemistry For up to 200 mm wafers Diagnostic windows for laser interferometer and OES
SI 500 CCP
CCP plasma etch system He back side cooling Dynamic temperature control up to 250 °C For up to 200 mm wafers Upgradable to fully functional ICP-RIE system with PTSA ICP source