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SI 500 CCP RIE System with He Back Side Cooling

A conductively coupled plasma etch tool with Helium back side cooling for processing of substrates in RIE mode.

Dekoratives Bild
Dekoratives Bild

Key features & benefits

Remarkable Material Etching Flexibility

From structuring dielectrics to III-V compounds like GaAs and InP, the SENTECH SI 500 CCP RIE Plasma Etch system with Helium (He) back side cooling, works across a wide temperature range (RT to 250°C). Physical etching of metals and slow etching of quantum materials such as graphene and hBN are possible.

Excellent process stability

He back side cooling and dynamic temperature control enable steady etching by preventing substrate heating. Using SENTECH adaptive substrate handling, small wafers can be easily processed with He back side cooling, without opening the reactor.

Excellent uniformity

The SI 500 CCP operates in RIE mode with a showerhead for uniform gas distribution, providing excellent uniformity and consistent results up to 200 mm substrates.

SENTECH SI 500 CCP

The SENTECH SI 500 CCP system represents the leading edge in material etching flexibility using dynamic temperature control with He back side cooling. Substrate temperature setting and stability during the plasma etching processes are demanding criteria for high-quality etching. The substrate electrode with dynamic temperature control in combination with He back side cooling and wafer back side temperature sensing provides excellent process conditions over a wide temperature range.

Flexibility and modularity

The SENTECH SI 500 CCP is a conductively coupled plasma (CCP) etch system with He backside cooling for the processing of substrates in RIE mode. It is designed for modularity and process flexibility in the area of III/V and Si processing.

The system is well-proven in the all important etching processes of different technologies and can perform a wide variety of etch processes.

The SENTECH SI 500 CCP  is controlled by advanced hardware and SIA operating software, with a client-server architecture. A well-proven, reliable programmable logic controller (PLC) is used for the real-time control of all components.

Configurations

SI 500 CCP

SENTECH SI 500 CCP
  • CCP plasma etch system
  • He back side cooling
  • Dynamic temperature control up to 250 °C
  • For up to 200 mm wafers
  • Upgradable to fully functional ICP-RIE system with PTSA ICP source

Plasma etching enables the precise removal of materials from a substrate through chemical and physical reactions driven by ionised gases. Unlike traditional wet etching, which uses liquid chemicals and often produces isotropic profiles, plasma etching provides anisotropic, highly controlled material removal. For more information, click here.

SENTECH offer plasma etching systems to facilitate reactive ion etching (RIE), low-damage inductively coupled reactive ion etching (ICP-RIE), deep reactive ion etching (DRIE), cryogenic etching and low-damage atomic layer etching.

While many SENTECH systems are single-chamber tools, each dedicated to a specific process type (e.g., ICP-RIE for etch, ICPECVD for deposition), cluster-style configurations can bring multiple modules together under shared vacuum handling, letting you do different processes in sequence without breaking vacuum.

In general, you will need electrical power, compressed air, purging nitrogen, cooling water and a process gas supply and exhaust. You will receive an installation manual with your system, which will outline all of the specific requirements of your purchased system. Our technical service team are available to offer support and answer questions.

SENTECH has an international network of distributors and technical service experts. We deliver globally, including Europe, Asia, Africa, North and South America. For more details on in-country representation, click here

SENTECH has a large team of application experts for both plasma process technology and thin film metrology. At our campus are two laboratories which are used to process and characterise customer samples, for system demonstrations and customer training. SENTECH offers application support for the lifecycle of your system. Learn more about our application support or contact the team.

Yes, SENTECH has two application labs in-house. You can contact our application team, who will share with you all the details and provide a sample analysis form for you to complete. Click here for further information and contact details.

Yes, SENTECH has a large network of technical service experts who offer in-country support for both plasma process technology and thin film metrology systems. Remote or on-site support is possible depending on your requirements. Click here to find out more or to contact the team.

SENTECH provides process modules that combine multiple processes, such as SIPAR for PECVD and PEALD, in a single reactor. The SI 500 ICP-RIE accommodates chlorine and fluorine-based etch chemistry in one process chamber. These configurations come with dedicated hardware, cleaning and conditioning recipes, as well as training. These solutions prioritise a smaller footprint and cost efficiency while maintaining practical process repeatability performance.

Reactive Ion Etching (RIE) combines chemical etching with physical ion bombardment to deliver precise pattern transfer. In RIE systems, a plasma is generated between two electrodes using a radio frequency (RF) power source. Reactive species chemically react with the substrate surface while positive ions accelerate toward it, physically sputtering atoms away. Learn more about plasma etching processes.

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