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SI 500 C Cryogenic ICP-RIE System

Cryogenic etching using the SI 500 C represents the leading edge for inductively coupled plasma (ICP) processing

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Key features & benefits

Low-damage cryogenic etching

The SENTECH SI 500 C Cryogenic ICP-RIE Plasma Etch System represents the leading edge for inductively coupled plasma (ICP) processing with widest temperature range from -150 °C to 150 °C. Due to low ion energy and narrow ion energy distribution, low-damage etch and nanostructuring can be performed with SENTECH ICP etch tools.

Deep silicon etching using cryogenic processing

The inductively coupled SENTECH SI 500 C Cryogenic ICP-RIE Plasma Etch system is designed for cryogenic etching of silicon for smooth sidewalls, silicon etching at room temperature, and deep silicon etching using the gas chopping processes with applications in fluidics, sensors, optoelectronics, photonics, and quantum technologies.

The SENTECH proprietary plasma source technology

The SENTECH Planar Triple Spiral Antenna (PTSA) is a unique, high-end ICP plasma source. The PTSA source generates uniform plasma with high ion density and low ion energy suited for low-damage etch of sensors and quantum dots. It features high coupling efficiency and very good ignition behaviour for processing a large variety of materials and structures.

Dynamic temperature control

Substrate temperature setting and stability during the plasma etching processes are demanding criteria for high-quality etching. The substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range. Generally, the cryogenic electrode is cooled using liquid nitrogen, however, a cryogenic electrode can also be used for room-temperature processing with a chiller. There is an option available for an automated switchover to and from cryogenic etching to room temperature etching.

SENTECH SI 500 C

The SENTECH SI 500 C Cryogenic ICP-RIE Plasma Etch system represents the leading edge for inductively coupled plasma (ICP) processing with widest temperature range from -150 °C to 150 °C. The tool comprises the ICP plasma source PTSA, a dynamic temperature-controlled substrate electrode, a fully controlled vacuum system, and a very easy-to-operate user interface. Flexibility and modularity are design characteristics of the SENTECH SI 500 C Cryogenic ICP-RIE Plasma Etch system. The system can be configured for processing a variety of delicate structures, including but not limited to Si, SiO2, Si3N4, GaAs, and InP.

Flexibility and modularity

A variety of substrates from 150 mm wafers up to 200 mm in diameter, as well as substrates on carriers, can be handled by the flexible load lock built into the SENTECH SI 500 C Crogenic ICP-RIE Plasma Etch system. The single-wafer vacuum load lock guarantees stable process conditions and allows for straightforward switching of processes.

SENTECH offers different levels of automation ranging from vacuum cassette loading to a one-process chamber for up to a six-port cluster configuration, with different etch and deposition modules offering high flexibility and high throughput. The system can also be incorporated as a process module on a cluster configuration.

The SENTECH SI 500 C system is controlled by advanced hardware and SIA operating software, with a client-server architecture. A well-proven, reliable programmable logic controller (PLC) is used for the real-time control of all components.

Configurations

SI 500 C

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  • Cryogenic ICP plasma etch system
  • With vacuum load lock
  • Substrate temperature from -150 °C to 80 °C (LN2 cooling)
  • Substrate temperature -10 °C to 150 °C for Bosch process with circulation chiller (optional)
  • Automatic switching unit for comfortable change between cryogenic etch and Bosch process

SI 500 C RT

  • Cryogenic ICP plasma etch system with automatic switching unit for comfortable change between cryogenic etch and room temperature processing
  • With vacuum load lock
  • Substrate temperature from -150 °C to 80 °C (LN2 cooling)
  • Substrate temperature -10 °C to 150 °C for room temperature processing with circulation chiller

SI 500 C DRIE

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  • Cryogenic ICP DRIE plasma etch system with gas chopping (Bosch) capability
  • With vacuum load lock
  • Automatic switching unit for comfortable change between cryogenic etch and gas chopping (Bosch) process
  • Substrate temperature from -150 °C to 80 °C (LN2 cooling)
  • Substrate temperature range from -10 °C to +150 °C for gas chopping (Bosch) process with circulation chiller

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