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SI 500 ALE

An extension of the SI 500, the SI 500 ALE provides stable plasma at low operating pressure and low ICP power for low-damage etching with precise RF control.

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Key features & benefits

Precise low-ion‐energy/ion bias control with PTSA Source

The SI 500 ALE combines the SENTECH Planar Triple Spiral Antenna (PTSA) inductively coupled plasma (ICP) source with precise rf/bias control to achieve extremely low ion energies. This allows for highly controlled, low-damage etching at atomic-scale steps essential for ALE. Low-ion‐energy operations and ion-flux control minimise substrate damage, reduce defects, and permit more uniform and repeatable etch cycles.

Dynamic temperature and backside cooling control

SI 500 ALE offers dynamic temperature control of the substrate electrode, plus helium backside cooling and temperature sensing. This ensures that the substrate stays within tightly controlled temperature ranges even during challenging ALE cycles, which often involve alternating chemical/physical steps sensitive to thermal drift. Keeping the temperature stable helps in achieving reproducible etch rates and smoothness. Dynamic temperature control with helium backside cooling ensures flexible performance for the SI 500 ICP-RIE tool, both for ALE and continuous etch applications.

In-situ monitoring and efficient gas handling

For ALE, being able to detect endpoints, monitor reactions in real-time, and switch gases cleanly and reliably between steps is crucial. The SI 500 ALE configuration provides optional real-time monitoring tools with in-situ ellipsometry. Plus, the system offers efficient gas control/switching, which supports precise control over the cyclic ALE steps. This reduces cycle time, improves yield, and helps detect and avoid over-etching or process drift.

SI 500 ALE

The SI 500 ALE is engineered for maximum flexibility and modularity. The SI 500 ALE system supports the processing of a wide range of materials critical to advanced semiconductor and nanotechnology applications. These include, but are not limited to, III–V and II–VI compound semiconductors (such as GaAs, InP, AlGaN, GaN, and InSb), dielectrics, silicon-based materials (Si, SiC), quartz, glass, and metals.

Flexibility and modularity

The SENTECH SI 500 ALE System represents the leading edge of atomic layer etching technology for both research and industrial nanofabrication. Designed to deliver atomic-scale precision, the system integrates the SENTECH Planar Triple Spiral Antenna (PTSA) plasma source with independent RF bias control, enabling precise ion energy tuning essential for sub-nanometre precision ALE processes. In addition to the ALE configuration, the SENTECH SI 500 system in ICP-RIE and cryogenic mode also offers continuous etching capabilities. The combination of continuous etching and ALE in one process supports a controlled, low-damage approach to stopping the etch process as it approaches a critical interface or layer.

The SI 500 ALE configuration features a dynamic temperature-controlled substrate electrode, ensuring process stability and repeatability across cyclic etch steps. Its fully automated vacuum and gas handling system allows fast, contamination-free switching between reactant and purge gases, supporting reliable ALE cycles. The system can optionally be fitted with the SENTECH AL Real Time Monitor for fast and efficient process monitoring, development and optimisation.

The SENTECH SI 500 System with ALE extension is controlled by advanced hardware and SIA operating software, with a client-server architecture. A well-proven, reliable programmable logic controller (PLC) is used for the real-time control of all components.

Configurations

SI 500

SENTECH SI 500 ICP-RIE Plasma Etch System
  • ICP-RIE plasma etch system
  • With compact vacuum load lock
  • For up to 200 mm wafers
  • Substrate temperature from -20 °C to 250 °C
  • Optional: -30 °C to 200 °C

SI 500 C

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  • Cryogenic ICP plasma etch system
  • With vacuum load lock
  • Substrate temperature from -150 °C to 80 °C (LN2 cooling)
  • Substrate temperature -10 °C to 150 °C for Bosch process with circulation chiller (optional)
  • Automatic switching unit for comfortable change between cryogenic etch and Bosch process

SI 500 400

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  • ICP plasma etch system for multi-wafers and large substrates
  • With vacuum load lock
  • For up to 380 mm wafers

SI 500 DRIE

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  • Deep reactive ion etch system for gas chopping process
  • Fast gas replacement for low scalloping and smoother sidewalls
  • Efficient ICP source coupling for fast etch rate
  • For up to 150 mm wafers

Plasma etching enables the precise removal of materials from a substrate through chemical and physical reactions driven by ionised gases. Unlike traditional wet etching, which uses liquid chemicals and often produces isotropic profiles, plasma etching provides anisotropic, highly controlled material removal. For more information, click here.

SENTECH offer plasma etching systems to facilitate reactive ion etching (RIE), low-damage inductively coupled reactive ion etching (ICP-RIE), deep reactive ion etching (DRIE), cryogenic etching and low-damage atomic layer etching.

While many SENTECH systems are single-chamber tools, each dedicated to a specific process type (e.g., ICP-RIE for etch, ICPECVD for deposition), cluster-style configurations can bring multiple modules together under shared vacuum handling, letting you do different processes in sequence without breaking vacuum.

In general, you will need electrical power, compressed air, purging nitrogen, cooling water and a process gas supply and exhaust. You will receive an installation manual with your system, which will outline all of the specific requirements of your purchased system. Our technical service team are available to offer support and answer questions.

SENTECH has an international network of distributors and technical service experts. We deliver globally, including Europe, Asia, Africa, North and South America. For more details on in-country representation, click here

SENTECH has a large team of application experts for both plasma process technology and thin film metrology. At our campus are two laboratories which are used to process and characterise customer samples, for system demonstrations and customer training. SENTECH offers application support for the lifecycle of your system. Learn more about our application support or contact the team.

Yes, SENTECH has two application labs in-house. You can contact our application team, who will share with you all the details and provide a sample analysis form for you to complete. Click here for further information and contact details.

Yes, SENTECH has a large network of technical service experts who offer in-country support for both plasma process technology and thin film metrology systems. Remote or on-site support is possible depending on your requirements. Click here to find out more or to contact the team.

SENTECH provides process modules that combine multiple processes, such as SIPAR for PECVD and PEALD, in a single reactor. The SI 500 ICP-RIE accommodates chlorine and fluorine-based etch chemistry in one process chamber. These configurations come with dedicated hardware, cleaning and conditioning recipes, as well as training. These solutions prioritise a smaller footprint and cost efficiency while maintaining practical process repeatability performance.

Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) represents the next generation of plasma etching technology. It separates plasma generation and ion acceleration into two independently controlled systems:

  • Inductively coupled RF coil – generates a high-density plasma
  • Bias power source – controls ion energy at the substrate

This dual control enables deeper etching, improved anisotropy, and minimal substrate damage. Learn more about plasma etching processes.

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