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Quantum

Discover SENTECH solutions for quantum device fabrication, including plasma etching, thin-film deposition and metrology for superconducting circuits, quantum sensors and quantum computing

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Quantum Applications

Quantum technologies utilise the principles of quantum mechanics to process, transmit, and store information with unprecedented sensitivity, speed, and security. Quantum devices rely on precisely engineered nanoscale structures and exceptionally high material quality to preserve quantum states and minimise loss. Applications include superconducting quantum circuits, quantum photonics, spin-based devices, colour centres in diamond, quantum sensors, and emerging quantum communication systems. As quantum technologies transition from laboratory research towards commercialisation, demand continues to grow across scientific research, computing, communications, defence, aerospace, and healthcare.

Industries:
Quantum computing
Quantum communications
Defence
Aerospace
Healthcare

The SENTECH plasma process technology portfolio provides highly effective solutions for the fabrication of advanced quantum devices. The SENTECH SI 500 ICP-RIE system enables highly selective, low-damage plasma etching of superconducting materials such as niobium (Nb) on silicon, supporting the fabrication of superconducting quantum circuits with smooth surfaces, well-controlled sidewalls, and minimal substrate damage. The system also offers precise endpoint detection and process control, enabling highly repeatable fabrication of nanoscale quantum device structures.

For diamond-based quantum technologies, the SI 500 ICP-RIE platform enables the fabrication of high-aspect-ratio micro- and nanostructures with smooth sidewalls and excellent dimensional control. These processes support the development of photonic cavities, waveguides, nanopillars, and other structures incorporating nitrogen-vacancy (NV) centres for quantum sensing, quantum communication, and quantum information processing.

The SENTECH SI PEALD system enables the low-temperature deposition of ultra-thin dielectric, passivation, and functional films with atomic-scale thickness control. Plasma-Enhanced Atomic Layer Deposition (PEALD) is ideally suited for quantum device fabrication, where conformal coatings, exceptional interface quality, and precise thickness control are essential for minimising defects and maximising device performance. Typical applications include superconducting quantum circuits, Josephson junction fabrication, quantum photonic devices, and dielectric layers for next-generation quantum processors.

SENTECH’s thin-film metrology portfolio, including spectroscopic ellipsometry and reflectometry, provides accurate, non-destructive characterisation of ultra-thin films used in quantum device fabrication. Precise measurement of film thickness and optical properties supports process development, optimisation, and quality control throughout device manufacturing.

Learn more about SENTECH plasma process technology, endpoint detection, atomic layer deposition, and thin-film characterisation solutions for quantum technologies by requesting the full application note.

Diamond Etching for Quantum Computing and Sensing using the SENTECH SI 500 ICP-RIE System

Isotropic etch of a free-standing diamond waveguide
Diamond Etching for Quantum Computing and Sensing using the SENTECH SI 500 ICP-RIE System
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Low-damage plasma etching is crucial for the fabrication of diamond-based quantum technologies, such as quantum computing and quantum sensing. The unique properties of diamond, such as its long spin coherence time and its ability to host nitrogen-vacancy (NV) centres, make it an excellent candidate for use in quantum applications. The NV centres can be used as qubits in quantum computing and for sensing weak magnetic and electric fields. Isotropic and anisotropic plasma etching are necessary to produce tailored diamond structures for various applications. Inductively coupled plasma reactive ion etching (ICP-RIE) is a preferred method for diamond plasma etching due to its high selectivity, low non-uniformity, and low damage.

Low-Damage Etching of Al Layers on Si for Advanced MEMS Sensors and Quantum Device Fabrication using the SENTECH SI 500 ICP-RIE System

Al layers on Si vertical sidewalls
Low-Damage Etching of Al Layers on Si for Advanced MEMS Sensors and Quantum Device Fabrication using the SENTECH SI 500 ICP-RIE System
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Aluminium (Al) is a key material in advanced semiconductor, MEMS sensors, and quantum device fabrication, where low interface roughness, vertical sidewall profiles, and stringent etch uniformity are critical for device performance and yield. In particular, Al-on-Silicon (Si) processes used in superconducting quantum circuits, high-frequency devices, and precision sensors place stringent demands on plasma etching to minimise substrate damage and maintain reproducible feature geometry. This application note demonstrates a robust, low-damage, inductively coupled plasma  reactive ion etching (ICP-RIE) process for Al layers on a 100 mm Si wafer using the SENTECH SI 500 ICP-RIE system. The process achieves smooth underlying Si surfaces after Al removal, vertical sidewalls, and an Al etch depth non-uniformity of ±2% across the wafer, including over-etch, highlighting the capability of the SI 500 for demanding Al etch applications.

Low-Damage Etching of Nb for Superconducting Quantum Devices using the SENTECH SI 500 ICP-RIE System

Etched Nb layers on Si with vertical sidewall
Low-Damage Etching of Nb for Superconducting Quantum Devices using the SENTECH SI 500 ICP-RIE System
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Niobium (Nb) is a critical material for superconducting quantum circuits and devices, where low microwave loss, smooth interfaces, and well-controlled feature geometry are essential for achieving long coherence times and high device yield. Nb-on-silicon (Si) fabrication places stringent demands on plasma etching, requiring low substrate damage, vertical sidewalls, and excellent etch uniformity across the wafer.
This application note is a comparative study on chlorine (Cl) and fluorine (F) etch chemistries for low-damage ICP-RIE processes for Nb films on 100 mm Si wafers developed on the SENTECH SI 500 ICP-RIE system. We will demonstrate successful etching processes for smooth underlying Si surfaces after Nb removal with vertical sidewall profiles, and low etch depth non-uniformity across the wafer, including over-etch with both chemistries. Based on our results, we will illustrate the suitability of the SI 500 for quantum device fabrication.

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