What is plasma etching? Learn more about plasma etching processes
Plasma etching enables the precise removal of materials from a substrate through chemical and physical reactions driven by ionised gases. Unlike traditional wet etching, which uses liquid chemicals and often produces isotropic profiles, plasma etching provides anisotropic, highly controlled material removal. For more information, click here.
SENTECH SI 500 ICP-RIE Brochure
SI 500 C DRIE
Cryogenic ICP DRIE plasma etch system with gas chopping (Bosch) capability With vacuum load lock Automatic switching unit for comfortable change between cryogenic etch and gas chopping (Bosch) process Substrate temperature from -150 °C to 80 °C (LN2 cooling) Substrate temperature range from -10 °C to +150 °C for gas chopping (Bosch) process with circulation chiller
SI 500 C RT
Cryogenic ICP plasma etch system with automatic switching unit for comfortable change between cryogenic etch and room temperature processing With vacuum load lock Substrate temperature from -150 °C to 80 °C (LN2 cooling) Substrate temperature -10 °C to 150 °C for room temperature processing with circulation chiller
SI 500 C
Cryogenic ICP plasma etch system With vacuum load lock Substrate temperature from -150 °C to 80 °C (LN2 cooling) Substrate temperature -10 °C to 150 °C for Bosch process with circulation chiller (optional) Automatic switching unit for comfortable change between cryogenic etch and Bosch process
SI 500 C Cryogenic ICP-RIE System
Cryogenic etching using the SI 500 C represents the leading edge for inductively coupled plasma (ICP) processing