Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) represents the next generation of plasma etching technology. It separates plasma generation and ion acceleration into two independently controlled systems:
- Inductively coupled RF coil – generates a high-density plasma
- Bias power source – controls ion energy at the substrate
This dual control enables deeper etching, improved anisotropy, and minimal substrate damage. Learn more about plasma etching processes.