- PECVD and ALD combined in one reaction reactor
- With vacuum load lock
- For up to 200 mm wafers
- PTSA ICP plasma source for ICPECVD and PEALD
- Direct backing pump operation for ALD
- Turbo molecular pump operation for PECVD
- Switchablebypass system for optimal process parameters
- Substrate bias power (optional)
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Plasma Process Technology
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Low-damage plasma etch and deposition systems from SENTECH
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SENTECH thin film metrology tools for repeatable and accurate results
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