SENTECH SI 500 ICP-RIE Brochure
SI 500 DRIE
Deep reactive ion etch system for gas chopping process Fast gas replacement for low scalloping and smoother sidewalls Efficient ICP source coupling for fast etch rate For up to 150 mm wafers
SI 500 400
ICP plasma etch system for multi-wafers and large substrates With vacuum load lock For up to 380 mm wafers
SI 500 C
Cryogenic ICP plasma etch system With vacuum load lock Substrate temperature from -150 °C to 80 °C (LN2 cooling) Substrate temperature -10 °C to 150 °C for Bosch process with circulation chiller (optional) Automatic switching unit for comfortable change between cryogenic etch and Bosch process
SI 500
ICP-RIE plasma etch system With compact vacuum load lock For up to 200 mm wafers Substrate temperature from -20 °C to 250 °C Optional: -30 °C to 200 °C
SI 500 ALE
An extension of the SI 500, the SI 500 ALE provides stable plasma at low operating pressure and low ICP power for low-damage etching with precise RF control.